Journal article
Nanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.259(4), 2100481
04/2022
DOI: 10.1002/pssb.202100481
Abstract
A single-crystal Bi2Se3 topological insulator is fabricated using the Bridgman-Stockbarger method. The crystal structure and atomic lattice parameters are identified by X-ray diffraction analysis. The nanoindentation size effect on creep displacement, activation volume, and strain rate sensitivity (SRS) with different maximum holding loads between 1000 and 5000 mu N is investigated using depth-sensing nanoindentation. Furthermore, the effect of the loading rate on the steady-state creep displacement and SRS is analyzed and discussed. Results show Bi2Se3's low resistance to plastic deformation and a significant increase of creep displacement with increasing holding load and holding rate. Additionally, creep strain rate, activation volume, and SRS are also calculated from the secondary stage creep, and results are compared with those of other flexible electronic materials.
Details
- Title: Subtitle
- Nanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator
- Creators
- Utku Uzun - University of IowaCaterina Lamuta - University of Iowa, Mechanical EngineeringMehmet Yetmez - Bülent Ecevit University
- Resource Type
- Journal article
- Publication Details
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.259(4), 2100481
- DOI
- 10.1002/pssb.202100481
- ISSN
- 0370-1972
- eISSN
- 1521-3951
- Publisher
- Wiley
- Number of pages
- 9
- Grant note
- TUBITAK 2214-A International Doctoral Research Fellowship Programme; Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) 2019-77654622-01 / Scientific Research Projects Unit (BAP) of Zonguldak Bulent Ecevit University; Bulent Ecevit University
- Language
- English
- Date published
- 04/2022
- Academic Unit
- Mechanical Engineering
- Record Identifier
- 9984231948102771
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