Journal article
Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure
Physical review applied, Vol.11(6), 064026
06/12/2019
DOI: 10.1103/PhysRevApplied.11.064026
Abstract
We demonstrate a tunnel field-effect transistor based on a lateral heterostructure patterned from an LaAlO3/SrTiO3 electron gas. Charge is injected by tunneling from the LaAlO3/SrTiO3 contacts and the current through a narrow channel of insulating SrTiO3 is controlled via an electrostatic side gate. Drain-source I -V curves are measured at low and elevated temperatures. The transistor shows strong electric-field-dependent and temperature-dependent behavior, with a steep subthreshold slope as small as 10 mV/dec and a transconductance as high as approximately 22 mu A/V. A fully consistent transport model for the drain-source tunneling reproduces the measured steep subthreshold slope.
Details
- Title: Subtitle
- Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure
- Creators
- A. Mueller - Martin Luther University Halle-WittenbergC. Sahin - University of IowaM. Z. Minhas - Martin Luther University Halle-WittenbergB. Fuhrmann - Martin Luther University Halle-WittenbergM. E. Flatte - University of IowaG. Schmidt - Martin Luther University Halle-Wittenberg
- Resource Type
- Journal article
- Publication Details
- Physical review applied, Vol.11(6), 064026
- DOI
- 10.1103/PhysRevApplied.11.064026
- ISSN
- 2331-7019
- eISSN
- 2331-7019
- Publisher
- Amer Physical Soc
- Number of pages
- 9
- Grant note
- NMP3-LA-2010-246102 / European Commission in the project IFOX SFB 762 / DFG; German Research Foundation (DFG) DMR-1420451 / Center for Emergent Materials, a National Science Foundation Materials Research Science and Engineering Center
- Language
- English
- Date published
- 06/12/2019
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429028802771
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