Journal article
Near zero-field magnetoresistance and defects in gallium nitride pn junctions
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol.42(5), 052205
09/2024
DOI: 10.1116/6.0003855
Abstract
As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.
Details
- Title: Subtitle
- Near zero-field magnetoresistance and defects in gallium nitride pn junctions
- Creators
- M. J. Elko - Pennsylvania State UniversityD. T. Hassenmayer - Pennsylvania State UniversityA. A. Higgins - Pennsylvania State UniversityP. M. Lenahan - Pennsylvania State UniversityM. E. Flatté - University of IowaD. Fehr - University of IowaM. D. Craven - Redox Power SystemsT. D. Larsen - Formerly NexGen Power Systems, Inc
- Resource Type
- Journal article
- Publication Details
- Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol.42(5), 052205
- Publisher
- A V S AMER INST PHYSICS
- DOI
- 10.1116/6.0003855
- ISSN
- 2166-2746
- eISSN
- 2166-2754
- Number of pages
- 4
- Grant note
- FA9550-22-1-0308 / Air Force Office of Scientific Research (10.13039/100000181)
- Date published
- 09/2024
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984699522502771
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