Journal article
Nonlinear spin-polarized transport through a ferromagnetic domain wall
Physical review letters, Vol.89(9), pp.098302-983024
08/26/2002
DOI: 10.1103/PhysRevLett.89.098302
PMID: 12190445
Abstract
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands reduces the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.
Details
- Title: Subtitle
- Nonlinear spin-polarized transport through a ferromagnetic domain wall
- Creators
- G Vignale - University of MissouriM E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.89(9), pp.098302-983024
- DOI
- 10.1103/PhysRevLett.89.098302
- PMID
- 12190445
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Language
- English
- Date published
- 08/26/2002
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428820302771
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