Journal article
Nonmagnetic semiconductor spin transistor
Applied physics letters, Vol.83(14), pp.2937-2939
10/06/2003
DOI: 10.1063/1.1609656
Abstract
Nonmagnetic semiconductor spin transistor was discussed. Characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells were studied. It was found that very large spin splittings are possible in (110) InAn/GaSb/AlSb heterostructures due to BIA.
Details
- Title: Subtitle
- Nonmagnetic semiconductor spin transistor
- Creators
- K. C. HallWayne H. LauK. GündoğduMichael E. FlattéThomas F. Boggess
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.83(14), pp.2937-2939
- DOI
- 10.1063/1.1609656
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 10/06/2003
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428790102771
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