Journal article
Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects
Science (American Association for the Advancement of Science), Vol.280(5361), pp.262-264
04/10/1998
DOI: 10.1126/science.280.5361.262
PMID: 9535650
Abstract
Optical emission from individual strained indium arsenide (InAs) islands buried in gallium arsenide (GaAs) was studied. At low excitation power density, the spectra from these quantum dots consist of a single line. At higher excitation power density, additional emission lines appeared at both higher and lower energies, separated from the main line by about 1 millielectron volt. At even higher excitation power density, this set of lines was replaced by a broad emission peaking below the original line. The splittings were an order of magnitude smaller than the lowest single-electron or single-hole excited state energies, indicating that the fine structure results from few-particle interactions in the dot. Calculations of few-particle effects give splittings of the observed magnitude.
Details
- Title: Subtitle
- Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects
- Creators
- L. Landin - Lund UniversityM. S. Miller - Lund UniversityM.-E. Pistol - Lund UniversityC. E. Pryor - Lund UniversityL. Samuelson - Lund University
- Resource Type
- Journal article
- Publication Details
- Science (American Association for the Advancement of Science), Vol.280(5361), pp.262-264
- DOI
- 10.1126/science.280.5361.262
- PMID
- 9535650
- ISSN
- 0036-8075
- eISSN
- 1095-9203
- Language
- English
- Date published
- 04/10/1998
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428783302771
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