Journal article
Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux
Journal of crystal growth, Vol.312(2), pp.185-191
2010
DOI: 10.1016/j.jcrysgro.2009.10.033
Abstract
Growth optimization of unintentionally doped GaSb buffer layers on (1
0
0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters were varied to determine the optimal oxide desorption and GaSb growth conditions, as well as to investigate the conditions under which antimony condenses on the wafer surface. Variation of group-V stabilization flux level, timing of flux application during wafer heating and cooling, desorption anneal temperature, and GaSb growth temperature were investigated. Epilayer quality was gauged by optical microscopy, atomic force microscopy, 77
K photoluminescence, and X-ray photoelectron spectroscopy. Results indicate that growth of GaSb at
520
∘
C
, the highest temperature used here, combined with appropriate heating and cooling steps produces the highest quality bulk GaSb.
Details
- Title: Subtitle
- Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux
- Creators
- E.J Koerperick - University of IowaL.M Murray - University of IowaD.T Norton - University of IowaT.F Boggess - University of IowaJ.P Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of crystal growth, Vol.312(2), pp.185-191
- Publisher
- Elsevier B.V
- DOI
- 10.1016/j.jcrysgro.2009.10.033
- ISSN
- 0022-0248
- eISSN
- 1873-5002
- Language
- English
- Date published
- 2010
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199741902771
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