Journal article
Optimization of active regions in midinfrared lasers
Applied physics letters, Vol.74(2), pp.188-190
01/11/1999
DOI: 10.1063/1.123288
Abstract
The ideal performance of bulk, quantum well, and superlattice active regions for III-V interband midinfrared lasers are compared according to the maximum net gain per unit current density. Based on this figure of merit, which is appropriate for high-power as well as near-threshold operation, InAsSb quantum well active regions should have an order of magnitude lower threshold current than bulk InAs at room temperature. Optimized four-layer superlattices based on the InAs/GaInSb material system, however, should have two to ten times lower threshold currents than the quantum well active regions. Optimal thicknesses for these active regions were evaluated assuming a separate confinement region design. For the four-layer superlattices the optimal thickness is substantially thinner than has been commonly grown: 3 periods rather than 40 periods. (C) 1999 American Institute of Physics. [S0003-6951(99)01601-0].
Details
- Title: Subtitle
- Optimization of active regions in midinfrared lasers
- Creators
- J T Olesberg - University of IowaM E Flatte - University of IowaB J Brown - University of IowaC H Grein - University of Illinois at ChicagoT C Hasenberg - University of IowaS A Anson - University of IowaT F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.74(2), pp.188-190
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.123288
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Number of pages
- 3
- Language
- English
- Date published
- 01/11/1999
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428765902771
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