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Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices
Journal article   Open access   Peer reviewed

Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices

Markus Wohlgenannt
Physica status solidi. PSS-RRL. Rapid research letters, Vol.6(6), pp.229-242
06/2012
DOI: 10.1002/pssr.201206129
url
https://doi.org/10.1002/pssr.201206129View
Published (Version of record) Open Access

Abstract

We review recent work in the field of organic spintronics, focusing on our own contributions to this field. There are two principle magnetoresistance effects that occur in organic devices. (i) Organic magnetoresistance (OMAR), which occurs in nonmagnetic organic semiconductor devices. For example, in devices made from the prototypical small molecule Alq 3 OMAR reaches values of 10% or more at room temperature. (ii) Organic spin-valve effects that occur in devices that employ ferromagnetic electrodes for spin-polarized current injection and detection. We undertake an analysis of these two types of magnetoresistance with the goal of identifying the dominant spin-scattering mechanism. Analysis of OMAR reveals that hyperfine coupling is the dominant spin-coupling mechanism. Spin-orbit coupling, on the other hand, is important only in organic semiconductor materials containing heavy atoms. We explore the reasons why spin-orbit coupling is relatively unimportant in hydrocarbon materials. Next, we present a theory for spin diffusion in disordered organic semiconductors based on hyperfine coupling, taking into account a combination of incoherent carrier hopping and coherent spin precession in the random hyperfine magnetic fields. We compare our findings with experimental values for the spin-diffusion length. Finally, we demonstrate a criterion that allows the determination whether the organic spin-valves operate in the tunneling or injection regimes. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
hyperfine coupling OMAR organic magnetoresistance organic spintronics spin−orbit coupling tunneling magnetoresistance cover image

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