Journal article
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
Journal of applied physics, Vol.111(5), pp.053113-053113-4
03/13/2012
DOI: 10.1063/1.3693535
Abstract
The impact of post growth annealing on the electrical properties of a long wavelength infrared type-II superlattice (SL) was explored. Quarters of a single SL wafer were annealed at 440°C, 480°C, and 515°C, respectively for 30 min. Changes in the electrical properties were followed using spectral photoconductivity, temperature dependent Hall effect, and time-resolved pump-probe measurements. The bandgap energy remained at ∼107 meV for each anneal, and the photoresponse spectra showed a 25% improvement. The carrier lifetime increased from 12 to ∼15 ns with annealing. The electron mobility was nearly constant for the 440°C and 480°C anneals, and increased from ∼4500 to 6300 cm
2
/Vs for the 515°C anneal.
Details
- Title: Subtitle
- Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
- Creators
- H Haugan - Wright-Patterson Air Force BaseG Brown - Wright-Patterson Air Force BaseS Elhamri - Wright-Patterson Air Force BaseS Pacley - Wright-Patterson Air Force BaseB Olson - Wright-Patterson Air Force BaseT Boggess - Wright-Patterson Air Force Base
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.111(5), pp.053113-053113-4
- Publisher
- American Institute of Physics
- DOI
- 10.1063/1.3693535
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Date published
- 03/13/2012
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199758302771
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