Journal article
Predicted band structures of III-V semiconductors in wurtzite phase
Physical review. B, Condensed matter and materials physics, Vol.81(15), 155210
08/13/2009
DOI: 10.1103/PhysRevB.81.155210
Abstract
While non-nitride III-V semiconductors typically have a zincblende structure,
they may also form wurtzite crystals under pressure or when grown as
nanowhiskers. This makes electronic structure calculation difficult since the
band structures of wurtzite III-V semiconductors are poorly characterized. We
have calculated the electronic band structure for nine III-V semiconductors in
the wurtzite phase using transferable empirical pseudopotentials including
spin-orbit coupling. We find that all the materials have direct gaps. Our
results differ significantly from earlier {\it ab initio} calculations, and
where experimental results are available (InP, InAs and GaAs) our calculated
band gaps are in good agreement. We tabulate energies, effective masses, and
linear and cubic Dresselhaus zero-field spin-splitting coefficients for the
zone-center states. The large zero-field spin-splitting coefficients we find
may lead to new functionalities for designing devices that manipulate spin
degrees of freedom.
Details
- Title: Subtitle
- Predicted band structures of III-V semiconductors in wurtzite phase
- Creators
- Amrit De - University of IowaCraig E Pryor - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.81(15), 155210
- DOI
- 10.1103/PhysRevB.81.155210
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 08/13/2009
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199939002771
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