Journal article
Pressure dependence of band offsets in InAs/ Ga 1 − x In x Sb superlattices
Physical review. B, Condensed matter, Vol.55(7), pp.4477-4481
02/1997
DOI: 10.1103/PhysRevB.55.4477
Abstract
We have determined the pressure dependence of the valence-band offset between InAs and (Formula presented)(Formula presented)Sb (x∼0.25) by measuring the midinfrared photoluminescence (PL) of two InAs/(Formula presented)(Formula presented)Sb superlattice samples at liquid nitrogen temperature under hydrostatic pressures up to 40 kbar. The PL peaks move to higher energy with pressure at rates of 8.3±0.1 and 8.8±0.3 meV/kbar for the two samples. By comparing these results with a calculation based on the envelope function formalism, we deduced the pressure dependences of the valence-band offset between InAs and (Formula presented)(Formula presented)Sb of these samples to be 3.5±1.6 and 5.6±2.5 meV/kbar, respectively. These values are compared with the results of transport measurements on InAs/(Formula presented)(Formula presented)Sb (x⩽0.1) as well as a theoretical prediction for InAs/GaSb based on the model solid theory. © 1997 The American Physical Society.
Details
- Title: Subtitle
- Pressure dependence of band offsets in InAs/ Ga 1 − x In x Sb superlattices
- Creators
- Hyeonsik M. Cheong - Harvard UniversityWilliam Paul - Harvard UniversityMichael E. Flatté - University of IowaRichard H. Miles
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.55(7), pp.4477-4481
- DOI
- 10.1103/PhysRevB.55.4477
- NLM abbreviation
- Phys Rev B Condens Matter
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- American Physical Society
- Language
- English
- Date published
- 02/1997
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429032602771
Metrics
7 Record Views