Probing the local electronic structure of isovalent Bi atoms in InP

C. M. Krammel; A. R. da Cruz; M. E. Flatte; M. Roy; P. A. Maksym; L. Y. Zhang; K. Wang; Y. Y. Li; Shu Min Wang; P. M. Koenraad

doi:10.1103/PhysRevB.101.024113

Back

Probing the local electronic structure of isovalent Bi atoms in InP

Journal article

Peer reviewed

Probing the local electronic structure of isovalent Bi atoms in InP

C. M. Krammel, A. R. da Cruz, M. E. Flatte, M. Roy, P. A. Maksym, L. Y. Zhang, K. Wang, Y. Y. Li, Shu Min Wang and P. M. Koenraad

Physical review. B, Vol.101(2), p.1

01/31/2020

DOI: 10.1103/PhysRevB.101.024113

View Online

Abstract

Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled-state X-STM images on the natural {110} cleavage planes. The Bi impurity state has a highly anisotropic bowtielike structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the < 110 > directions, which define the bowtielike structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge toward higher energies. Furthermore, we show that the energetic position of the Bi-induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.

Condensed Matter Physics

Inorganic Chemistry

Atom and Molecular Physics and Optics

Atom- och molekylfysik och optik

Den kondenserade materiens fysik

Oorganisk kemi

Details

Title: Subtitle: Probing the local electronic structure of isovalent Bi atoms in InP
Creators: C. M. Krammel - Eindhoven University of Technology
A. R. da Cruz - Eindhoven University of Technology
M. E. Flatte - Eindhoven University of Technology
M. Roy - University of Leicester
P. A. Maksym - University of Leicester
L. Y. Zhang - University of Shanghai for Science and Technology
K. Wang - Shanghai Institute of Microsystem and Information Technology
Y. Y. Li - Shanghai Institute of Microsystem and Information Technology
Shu Min Wang - Chalmers University of Technology
P. M. Koenraad - Eindhoven University of Technology
Resource Type: Journal article
Publication Details: Physical review. B, Vol.101(2), p.1
DOI: 10.1103/PhysRevB.101.024113
ISSN: 2469-9950
eISSN: 2469-9969
Grant note: DOI: 10.13039/501100012166, name: National Basic Research Program of China, award: 2014CB643902; DOI: 10.13039/501100001809, name: National Natural Science Foundation of China, award: 61334004; DOI: 10.13039/501100007601, name: Horizon 2020, award: 721394; DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-SC0016447, DE-SC0016379
Language: English
Date published: 01/31/2020
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984428796202771

Metrics

7 Record Views

4 Times Cited - Web of Science

See more details