Journal article
Remote plasma treatment of Si surfaces: Enhanced nucleation in low-temperature chemical vapor deposition
Applied physics letters, Vol.95(14), 144107
10/05/2009
DOI: 10.1063/1.3243980
Abstract
The nucleation density on Si(100):H is increased by two orders of magnitude after exposing the surface to a remote argon plasma. We study HfB2 growth from Hf(BH4)4 and MgO growth from Mg(DMDBA)2 plus H2O. In the latter case, pretreatment allows the growth of MgO films with an rms roughness below 0.5 nm, whereas in absence of plasma treatment no nucleation is observed. The plasma does not damage the substrate and is compatible with microelectronics technology. We propose that H desorption is the key mechanism leading to nucleation enhancement, and that remote plasma activation is likely to be generally applicable.
Details
- Title: Subtitle
- Remote plasma treatment of Si surfaces: Enhanced nucleation in low-temperature chemical vapor deposition
- Creators
- Navneet KumarAngel Yanguas-GilScott R DalyGregory S GirolamiJohn R Abelson
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.95(14), 144107
- DOI
- 10.1063/1.3243980
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 10/05/2009
- Academic Unit
- Chemistry
- Record Identifier
- 9983985985502771
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