Journal article
Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
Semiconductor science and technology, Vol.27(3), p.35008
01/25/2012
DOI: 10.1088/0268-1242/27/3/035008
Abstract
ZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled.
Details
- Title: Subtitle
- Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
- Creators
- C C Zheng - University of Hong KongS J Xu - University of Hong KongJ Q Ning - University of Hong KongW Bao - University of Hong KongJ F Wang - University of Hong KongJ Gao - University of Hong KongJ M Liu - Institute of SemiconductorsJ H Zhu - University of Hong KongX L Liu - Institute of Semiconductors
- Resource Type
- Journal article
- Publication Details
- Semiconductor science and technology, Vol.27(3), p.35008
- Publisher
- IOP Publishing
- DOI
- 10.1088/0268-1242/27/3/035008
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- Number of pages
- 5
- Alternative title
- Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
- Language
- English
- Date published
- 01/25/2012
- Academic Unit
- Epidemiology
- Record Identifier
- 9984364441002771
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