Journal article
Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells
Applied physics letters, Vol.86(20), p.202114
05/16/2005
DOI: 10.1063/1.1929082
Abstract
We report the demonstration of room temperature gate control over the electron spin dynamics using the Rashba effect in a (110)
InAs
∕
AlSb
two-dimensional electron gas. Our calculations predict that the strong spin-orbit interaction in this system produces pseudomagnetic fields exceeding 1 T when only 140 mV is applied across a single quantum well. Using this large pseudomagnetic field, we demonstrate low-power spin manipulation on a picosecond time scale. Our findings are promising for the prospect of nonmagnetic low-power, high-speed spintronics.
Details
- Title: Subtitle
- Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells
- Creators
- K Hall - Dalhousie UniversityK Gündoğdu - University of IowaJ Hicks - Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242A Kocbay - University of IowaM Flatté - University of IowaT Boggess - University of IowaK Holabird - HRL LaboratoriesA Hunter - HRL LaboratoriesD Chow - HRL LaboratoriesJ Zinck - HRL Laboratories
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.86(20), p.202114
- Publisher
- American Institute of Physics
- DOI
- 10.1063/1.1929082
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 05/16/2005
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984442205602771
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