Journal article
Room‐temperature normal‐mode coupling in a semiconductor microcavity utilizing native‐oxide AlAl/GaAs mirrors
Applied physics letters, Vol.69(20), pp.3031-3033
11/11/1996
DOI: 10.1063/1.116829
Abstract
ABSTRACT
A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically‐assisted ion‐beam etching to form 50‐μm‐diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400 °C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well‐resolved reflectivity dips with an exciton‐polariton splitting of 6.72 nm=9.44 meV at room temperature.
Details
- Title: Subtitle
- Room‐temperature normal‐mode coupling in a semiconductor microcavity utilizing native‐oxide AlAl/GaAs mirrors
- Creators
- T. R Nelson - University of ArizonaJ. P Prineas - University of ArizonaG Khitrova - Optical SciencesH. M Gibbs - University of ArizonaE. K Lindmark - University of ArizonaJ. D Berger - University of ArizonaJ.‐H ShinH.‐E ShinY.‐H LeeP Tayebati - CoreTek, Inc.L Javniskis - CoreTek, Inc.
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.69(20), pp.3031-3033
- DOI
- 10.1063/1.116829
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 11/11/1996
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199684402771
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