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Scanning x-ray microscopy investigations into the electron-beam exposure mechanism of hydrogen silsesquioxane resists
Journal article

Scanning x-ray microscopy investigations into the electron-beam exposure mechanism of hydrogen silsesquioxane resists

Deirdre Olynick, J Liddle, Alexei Tivanski, Mary Gilles, Tolek Tyliszczak, Farhad Salmassi, Kathy Liang and Stephen Leone
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, Vol.24(6), pp.3048-3054
11/30/2006
DOI: 10.1116/1.2395957
url
https://www.osti.gov/biblio/901516View
Open Access

Abstract

Electron-beam exposed hydrogen silsesquioxane cross-linking chemistry is investigated by scanning transmission x-ray microscopy (STXM) and atomic force microscopy (AFM). Using STXM, a maximum in the chemical contrast is obtained by measuring the x-ray absorption at 535.4 eV , corresponding to the 1 s K -edge transition in oxygen. An area-dependent and dose-dependent chemical conversion is observed for feature sizes between 150 nm and 10 μ m and doses between 0.4 and 40 mC ∕ cm 2 . The activated (cross-linked) regions extend beyond the exposure zones, especially for higher dosed exposures. With AFM, thickness changes in the latent images (e-beam exposed but undeveloped) are observed, which also display a dependence on exposed area. Potential mechanisms, involving chemical diffusion outside the exposure zone, are discussed.

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