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Soft X-ray quantum efficiency of a commercial CMOS imaging sensor
Journal article   Peer reviewed

Soft X-ray quantum efficiency of a commercial CMOS imaging sensor

Colin M. Packard, Steve Tammes, Philip Kaaret, Casey DeRoo, Jessica L. McChesney, John W. Freeland and Fanny Rodolakis
Journal of astronomical telescopes, instruments, and systems, Vol.10(3), 036001
08/10/2024
DOI: 10.1117/1.JATIS.10.3.036001
url
https://www.osti.gov/biblio/2565008View
Open Access

Abstract

The demonstrated performance and cost-effectiveness of complementary metal–oxide–semiconductor (CMOS) sensors make them a potentially attractive option for low-cost space-based X-ray observatories. We have previously reported on the performance of a commercially available backside-illuminated Sony IMX290LLR-C CMOS sensor and found it to offer X-ray spectral resolutions comparable to the charged coupled devices (CCDs) aboard Suzaku and Chandra and to have a sufficient radiation hardness for use in low Earth orbit. In this work, we report on the quantum efficiency (QE) of this sensor, an essential metric for modeling the sensitivity of an instrument as an X-ray detector. Using the Advanced Photon Source at Argonne National Laboratory, we measure the soft X-ray QE of this CMOS sensor to be 0.28±0.02 at a photon energy of 490.5 eV. This energy was chosen for its proximity to the astrophysically important O VII triplet emission lines (∼574eV) studied by the HaloSat mission. Although not surpassing that of the back-illuminated CCDs aboard Suzaku and Chandra, this QE compares favorably to that of the front-illuminated CCDs aboard the same observatories and is competitive with that of the silicon drift detectors used aboard HaloSat, making it a strong candidate for use on future X-ray small satellite (SmallSat) missions.
complementary metal-oxide-semiconductor image sensor X-ray spectroscopy X-ray imaging backside-illuminated sensor performance soft X-ray quantum efficiency silicon

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