Journal article
Spin-Hall effect in a [110] GaAs quantum well
Physical review letters, Vol.97(26), pp.266601-266601
12/31/2006
DOI: 10.1103/PhysRevLett.97.266601
PMID: 17280444
Abstract
A self-consistent treatment of the spin-Hall effect requires consideration of the spin-orbit coupling and electron-impurity scattering on equal footing. This is done here for the experimentally relevant case of a [110] GaAs quantum well [Sih , Nature Phys. 1, 31 (2005)]. Working within the framework of the exact linear response formalism we calculate the spin-Hall conductivity including the Dresselhaus linear and cubic terms in the band structure, as well as the electron-impurity scattering and electron-electron interaction to all orders. We show that the spin-Hall conductivity naturally separates into two contributions, skew-scattering and side-jump, and we propose an experiment to distinguish between them.
Details
- Title: Subtitle
- Spin-Hall effect in a [110] GaAs quantum well
- Creators
- E. M. Hankiewicz - University of MissouriG. Vignale - University of MissouriM. E. Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.97(26), pp.266601-266601
- DOI
- 10.1103/PhysRevLett.97.266601
- PMID
- 17280444
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Publisher
- Amer Physical Soc
- Number of pages
- 4
- Language
- English
- Date published
- 12/31/2006
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429024002771
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