Journal article
Spin-State-Selective Excitation in Spin Defects of Hexagonal Boron Nitride
Nano letters, Vol.25(31), pp.12067-12074
08/06/2025
DOI: 10.1021/acs.nanolett.5c03056
PMID: 40711935
Abstract
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing due to its optically addressable spin defects, such as the negatively charged boron vacancy (VB-). Spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of VB- spin defects in hBN driven by a circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwaves shifted in phase from an FPGA to generate circularly polarized microwaves. This enables selective spin |0⟩ → |-1⟩ or |0⟩ → |1⟩ excitation of VB- defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of the magnetic field on spin-state selectivity. Our technique enhances the hBN platform for quantum sensing through better spin state control and magnetic sensitivity at low and zero fields.Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing due to its optically addressable spin defects, such as the negatively charged boron vacancy (VB-). Spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of VB- spin defects in hBN driven by a circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwaves shifted in phase from an FPGA to generate circularly polarized microwaves. This enables selective spin |0⟩ → |-1⟩ or |0⟩ → |1⟩ excitation of VB- defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of the magnetic field on spin-state selectivity. Our technique enhances the hBN platform for quantum sensing through better spin state control and magnetic sensitivity at low and zero fields.
Details
- Title: Subtitle
- Spin-State-Selective Excitation in Spin Defects of Hexagonal Boron Nitride
- Creators
- Mohammad Abdullah Sadi - Purdue University West LafayetteLuca Basso - Sandia National LaboratoriesDavid A Fehr - University of IowaXingyu Gao - Purdue University West LafayetteSumukh Vaidya - Purdue University West LafayetteEmmeline G Riendeau - University of ChicagoGajadhar Joshi - Sandia National LaboratoriesTongcang Li - Purdue University West LafayetteMichael E Flatté - University of IowaAndrew M Mounce - Sandia National LaboratoriesYong P Chen - Purdue University West Lafayette
- Resource Type
- Journal article
- Publication Details
- Nano letters, Vol.25(31), pp.12067-12074
- DOI
- 10.1021/acs.nanolett.5c03056
- PMID
- 40711935
- NLM abbreviation
- Nano Lett
- ISSN
- 1530-6992
- eISSN
- 1530-6992
- Publisher
- American Chemical Society
- Grant note
- Air Force Office of Scientific Research: DE-AC05-00OR22725 U.S. Department of Energy, Office of Science, National Quantum Information Science Research CentersLaboratory Directed Research and Development Program: DE-NA0003525 DOE's National Nuclear Security Administration: FA9550-22-1-0308 Air Force Office of Scientific Research
We thank the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, and Quantum Science Center for support through contract DE-AC05-00OR22725 for experimental work at Purdue University. This work was also funded, in part, by the Laboratory Directed Research and Development Program and performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the DOE's National Nuclear Security Administration under contract DE-NA0003525. The calculation results are based upon work supported by the Air Force Office of Scientific Research under award number FA9550-22-1-0308. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. We also thank Dr. Aroop Behera for assistance with 2D material transfer logistics, Dr. Sho Uemura for assistance with FPGA firmware, and Dr. Pauli Kehayias for early discussions on methods of generating circularly polarized microwaves.
- Language
- English
- Electronic publication date
- 07/25/2025
- Date published
- 08/06/2025
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984865312402771
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