Journal article
Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices
Applied physics letters, Vol.123(25), 251603
12/18/2023
DOI: 10.1063/5.0172275
Abstract
Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal–oxide–semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.
Details
- Title: Subtitle
- Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices
- Creators
- Nicholas J. Harmon - Coastal Carolina UniversityJames P. Ashton - Pennsylvania State UniversityPatrick M. Lenahan - Pennsylvania State UniversityMichael E. Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.123(25), 251603
- DOI
- 10.1063/5.0172275
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Number of pages
- 6
- Grant note
- FA9550-22-1-0308 / Air Force Office of Scientific Research (10.13039/100000181) 1-18-0012 / Defense Threat Reduction Agency (10.13039/100000774) 1-16-0008 / Defense Threat Reduction Agency (10.13039/100000774)
- Language
- English
- Date published
- 12/18/2023
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984533449602771
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