Journal article
Spin torque and charge resistance of ferromagnetic semiconductor 2β’π and π domain walls
Physical review. B, Condensed matter and materials physics, Vol.84(11), 115210
09/2011
DOI: 10.1103/PhysRevB.84.115210
Abstract
Charge resistance and spin torque are generated by coherent carrier transport through ferromagnetic 2β’π domain walls, and follow qualitatively different trends than for π domain walls. The charge resistance of 2β’π domain walls reaches a maximum at an intermediate wall thickness, unlike π domain walls, whose resistance decreases monotonically with wall thickness. The peak amplitude of the spin torque and the optimal thickness of the domain wall to maximize torque for a 2β’π wall are more than twice as large as found for a π domain wall in the same material, producing a larger domain wall velocity for the 2β’π wall and suggesting such walls may be preferable for magnetoelectronic devices incorporating domain wall motion.
Details
- Title: Subtitle
- Spin torque and charge resistance of ferromagnetic semiconductor 2β’π and π domain walls
- Creators
- E. A Golovatski - University of IowaM. E FlattΓ© - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.84(11), 115210
- DOI
- 10.1103/PhysRevB.84.115210
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 09/2011
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984200024002771
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