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Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics
Journal article

Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics

Asli Yildirim and John P Prineas
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.31(3), p.3
05/2013
DOI: 10.1116/1.4799352

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Abstract

strain MBE laser diode phase separation immiscibility Quaternary critical thickness detector photodiode III-V semiconductors

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