Journal article
Strain Effects on the Energy-Level Alignment at Metal/Organic Semiconductor Interfaces
ACS applied materials & interfaces, Vol.11(13), pp.12717-12722
04/03/2019
DOI: 10.1021/acsami.8b21531
PMID: 30859806
Abstract
Flexible and wearable devices are among the upcoming trends in the opto-electronics market. Nevertheless, bendable devices should ensure the same efficiency and stability as their rigid analogs. It is well-known that the energy barriers between the metal Fermi energy and the molecular levels of organic semiconductors devoted to charge transport are key parameters in the performance of organic-based electronic devices. Therefore, it is paramount to understand how the energy barriers at metal/organic semiconductor interfaces change with bending. In this work, we experimentally measure the interface energy barriers between a metallic contact and small semiconducting molecules. The measurements are performed in operative conditions, while the samples are bent by a controlled applied mechanical strain. We determine that energy barriers are not sensitive to bending of the sample, but we observe that the hopping transport of the charges in flat molecules can be tuned by mechanical strain. The theoretical model developed for this work confirms our experimental observations.
Details
- Title: Subtitle
- Strain Effects on the Energy-Level Alignment at Metal/Organic Semiconductor Interfaces
- Creators
- Ainhoa Atxabal - CIC nanoGUNEStephen R. McMillan - Univ Iowa, Dept Phys & Astron, 203 Van Allen Hall, Iowa City, IA 52242 USABenat Garcia-Arruabarrena - CIC nanoGUNESubir Parui - CIC nanoGUNERoger Llopis - CIC nanoGUNEFelix Casanova - IkerbasqueMichael E. Flatte - University of IowaLuis E. Hueso - Ikerbasque
- Resource Type
- Journal article
- Publication Details
- ACS applied materials & interfaces, Vol.11(13), pp.12717-12722
- Publisher
- Amer Chemical Soc
- DOI
- 10.1021/acsami.8b21531
- PMID
- 30859806
- ISSN
- 1944-8244
- eISSN
- 1944-8252
- Number of pages
- 6
- Grant note
- MAT2015-65159-R / Spanish MINECO; Spanish Government PRE_2017_2_0052 / Basque Government Stanley-UI Foundation Support Organization MDM-2016-0618 / Maria de Maeztu Units of Excellence Program DE-SC0014336 / DOE BES; United States Department of Energy (DOE) 257654-SPINTROS / European Research Council; European Research Council (ERC); European Commission
- Language
- English
- Date published
- 04/03/2019
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428824602771
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