Journal article
Strain engineering of the intrinsic spin Hall conductivity in a SrTiO3 quantum well
Physical review materials, Vol.3(1), 014401
01/2019
DOI: 10.1103/PhysRevMaterials.3.014401
Abstract
The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO3, such as occurs at an LaAlO3/SrTiO3 interface, is calculated from the Kubo formula. The effect of strain in the [001] and the [111] directions is incorporated into a full tight-binding Hamiltonian for a quantum well with a [001] growth direction. We show that the spin-charge conversion ratio can be significantly altered through the strain and gate voltage by tuning the chemical potential. The strain direction is also a significant factor in the spin Hall response, as this direction affects the alignment of the conduction bands.
Details
- Title: Subtitle
- Strain engineering of the intrinsic spin Hall conductivity in a SrTiO3 quantum well
- Creators
- Cüneyt ŞahinGiovanni VignaleMichael E Flatté
- Resource Type
- Journal article
- Publication Details
- Physical review materials, Vol.3(1), 014401
- DOI
- 10.1103/PhysRevMaterials.3.014401
- ISSN
- 2475-9953
- eISSN
- 2475-9953
- Grant note
- DOI: 10.13039/100000001, name: National Science Foundation, award: DMR-1420451; DOI: 10.13039/100000183, name: Army Research Office
- Language
- English
- Date published
- 01/2019
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984199696402771
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