Journal article
Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields
Physical review letters, Vol.118(18), pp.187201-187201
05/05/2017
DOI: 10.1103/PhysRevLett.118.187201
PMID: 28524685
Abstract
Two-dimensional materials provide a unique platform to explore the full potential of magnetic proximity-driven phenomena, which can be further used for applications in next-generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene-ferromagnetic-insulator (FMI) heterostructures. Here, we present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to FMI magnetization. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. Additionally, we discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the nonlocal spin signals in graphene, which is due to spin relaxation by thermally induced transverse fluctuations of the FMI magnetization.
Details
- Title: Subtitle
- Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields
- Creators
- Simranjeet Singh - The Ohio State UniversityJyoti Katoch - The Ohio State UniversityTiancong Zhu - The Ohio State UniversityKeng-Yuan Meng - The Ohio State UniversityTianyu Liu - University of IowaJack T Brangham - The Ohio State UniversityFengyuan Yang - The Ohio State UniversityMichael E Flatté - University of IowaRoland K Kawakami - The Ohio State University
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.118(18), pp.187201-187201
- DOI
- 10.1103/PhysRevLett.118.187201
- PMID
- 28524685
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Grant note
- DOI: 10.13039/100000006, name: Office of Naval Research, award: N00014-14-1-0350; DOI: 10.13039/100000001, name: National Science Foundation, award: DMR-1310661, DMR-1507274, DMR-1420451; DOI: 10.13039/100000183, name: Army Research Office, award: W911NF-11-1-0182; DOI: 10.13039/100007245, name: Microelectronics Advanced Research Corporation; DOI: 10.13039/100000185, name: Defense Advanced Research Projects Agency; DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-SC0001304; name: C-SPIN
- Language
- English
- Date published
- 05/05/2017
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199836102771
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