Journal article
Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, Vol.30(2), pp.02B104-02B104-7
03/2012
DOI: 10.1116/1.3668088
Abstract
Thick 2 um Ga1-xInxAsySb1-y layers lattice-matched to (100)-GaSb were grown by molecular beam epitaxy across the compositional range x = 0 to 1. By lowering the growth temperature to the 410 – 450 C range, phase separation was suppressed throughout the miscibility gap, as evidenced in measurements such as photoluminescence, high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. Bright photoluminescence was recorded in the sample series ranging from 1.7 to 4.9 ums.
Details
- Title: Subtitle
- Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials
- Creators
- Asli Yildirim - University of IowaJohn P Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, Vol.30(2), pp.02B104-02B104-7
- DOI
- 10.1116/1.3668088
- ISSN
- 1071-1023
- eISSN
- 1520-8567
- Number of pages
- 7
- Language
- English
- Date published
- 03/2012
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199776602771
Metrics
5 Record Views