Journal article
Surface induced asymmetry of acceptor wave functions
Physical review letters, Vol.104(8), pp.086404-1/4
02/26/2010
DOI: 10.1103/PhysRevLett.104.086404
PMID: 20366956
Abstract
Measurements of the local density of states of individual acceptors in III-V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III-V materials.
Details
- Title: Subtitle
- Surface induced asymmetry of acceptor wave functions
- Creators
- C Celebi - Eindhoven University of TechnologyJ K Garleff - Eindhoven University of TechnologyA Yu Silov - Eindhoven University of TechnologyA M Yakunin - Eindhoven University of TechnologyP M Koenraad - Eindhoven University of TechnologyW Van Roy - Katholieke Universiteit LeuvenJ-M Tang - University of New HampshireM E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.104(8), pp.086404-1/4
- DOI
- 10.1103/PhysRevLett.104.086404
- PMID
- 20366956
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Language
- English
- Date published
- 02/26/2010
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984200041802771
Metrics
7 Record Views