Journal article
Synthesis of Gallium Chalcogenide Cubanes and Their Use as CVD Precursors for Ga2E3 (E = S, Se)
Organometallics, Vol.15(22), pp.4880-4883
10/29/1996
DOI: 10.1021/om960480w
Abstract
The gallium−chalcogen heterocubanes [Cp*Ga(μ3-E)]4, E = S (1) and Se (2), and [Cp†Ga(μ3-Se)]4 (3) have been synthesized by dehalosilylation reactions between E(SiMe3)2 (E = S, Se) and RGaCl2, R = Cp* (C5Me5) and Cp† (C5Me4Et), and are characterized by elemental analyses, NMR spectroscopy, and mass spectrometry. The use of compounds 1 and 2 as single-source MOCVD precursors for the low-temperature growth of Ga2E3 films at 290−310 °C is described. The as-deposited films were amorphous; however, upon thermal annealing (500 °C) the films crystallized to the thermodynamic cubic phases, while the corresponding tellurium analog decomposed in the solid state at 220 °C forming a gallium-rich product.
Details
- Title: Subtitle
- Synthesis of Gallium Chalcogenide Cubanes and Their Use as CVD Precursors for Ga2E3 (E = S, Se)
- Creators
- Stephan SchulzEdward G GillanJean L RossLillian M RogersRobin D RogersAndrew R Barron
- Resource Type
- Journal article
- Publication Details
- Organometallics, Vol.15(22), pp.4880-4883
- Publisher
- American Chemical Society
- DOI
- 10.1021/om960480w
- ISSN
- 0276-7333
- eISSN
- 1520-6041
- Language
- English
- Date published
- 10/29/1996
- Academic Unit
- Chemistry
- Record Identifier
- 9984001177102771
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