Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

Nicholas R Jungwirth; Brian Calderon; Yanxin Ji; Michael G Spencer; Michael E Flatté; Gregory D Fuchs

doi:10.1021/acs.nanolett.6b01987

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Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

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Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

Nicholas R Jungwirth, Brian Calderon, Yanxin Ji, Michael G Spencer, Michael E Flatté and Gregory D Fuchs

Nano letters, Vol.16(10), pp.6052-6057

10/12/2016

DOI: 10.1021/acs.nanolett.6b01987

PMID: 27580074

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https://arxiv.org/pdf/1605.04445View

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Abstract

We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent line width, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are well described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly.

2D material

zero-phonon line

point defect

Single-photon source

hexagonal boron nitride

line width

Details

Title: Subtitle: Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
Creators: Nicholas R Jungwirth - Cornell University
Brian Calderon - Cornell University
Yanxin Ji - Cornell University
Michael G Spencer - Cornell University
Michael E Flatté - University of Iowa
Gregory D Fuchs - Cornell University
Resource Type: Journal article
Publication Details: Nano letters, Vol.16(10), pp.6052-6057
DOI: 10.1021/acs.nanolett.6b01987
PMID: 27580074
NLM abbreviation: Nano Lett
ISSN: 1530-6984
eISSN: 1530-6992
Grant note: DOI: 10.13039/100000181, name: Air Force Office of Scientific Research; DOI: 10.13039/100000078, name: Division of Materials Research, award: DMR-1254530
Language: English
Date published: 10/12/2016
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984199931902771

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