Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Y. Aytac; B. V. Olson; J. K. Kim; E. A. Shaner; S. D. Hawkins; J. F. Klem; M. E. Flatte; T. F. Boggess

doi:10.1063/1.4931419

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Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

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Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Y. Aytac, B. V. Olson, J. K. Kim, E. A. Shaner, S. D. Hawkins, J. F. Klem, M. E. Flatte and T. F. Boggess

Journal of applied physics, Vol.118(12), 125701

09/28/2015

DOI: 10.1063/1.4931419

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https://www.osti.gov/biblio/1496990View

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Abstract

Temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs1-xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16K band-gap of similar to 235 +/- 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Also, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n similar to 10(16) cm(-3). (C) 2015 AIP Publishing LLC.

Physical Sciences

Physics

Physics, Applied

Science & Technology

Details

Title: Subtitle: Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices
Creators: Y. Aytac - University of Iowa
B. V. Olson - Sandia National Laboratories
J. K. Kim - Sandia Natl Labs, Albuquerque, NM 87185 USA
E. A. Shaner - Sandia National Laboratories
S. D. Hawkins - Sandia Natl Labs, Albuquerque, NM 87185 USA
J. F. Klem - Sandia National Laboratories
M. E. Flatte - University of Iowa
T. F. Boggess - University of Iowa
Resource Type: Journal article
Publication Details: Journal of applied physics, Vol.118(12), 125701
DOI: 10.1063/1.4931419
ISSN: 0021-8979
eISSN: 1089-7550
Publisher: Amer Inst Physics
Number of pages: 9
Grant note: U.S. Government DE-AC04-94AL85000 / U.S. Department of Energy's National Nuclear Security Administration; National Nuclear Security Administration
Language: English
Date published: 09/28/2015
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984442200402771

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