Journal article
The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors
Physical review. B, Condensed matter and materials physics, Vol.85(24), 245213
03/19/2012
DOI: 10.1103/PhysRevB.85.245213
Abstract
Phys. Rev B 85, 245213 (2012) A recent theory of magnetoresistance in positionally disordered organic
semiconductors is extended to include exchange and dipolar couplings between
polarons. Analytic results are discovered when the hyperfine, exchange, and
dipolar interactions have little time to operate between hopping events. We
find an angle-of-field dependence of the magnetoresistance that agrees with
previous experiments and numerical simulations. In addition we report new
magnetoresistive behavior that critically depends upon the amount of anisotropy
in the dipolar interaction.
Details
- Title: Subtitle
- The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors
- Creators
- N. J Harmon - University of IowaM. E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.85(24), 245213
- DOI
- 10.1103/PhysRevB.85.245213
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 03/19/2012
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984200051102771
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