Journal article
Theoretical performance of very long wavelength InAs/In x Ga 1− x Sb superlattice based infrared detectors
Applied physics letters, Vol.65(20), pp.2530-2532
11/14/1994
DOI: 10.1063/1.112626
Abstract
Optimal detectivities of very long wavelength (11-19 μm) photovoltaic infrared detectors based on ideal InAs/InGaSb superlattices are calculated. Accurate Kp band structures are used to obtain radiative, electron-electron and hole-hole band-to-band Auger, and for the first time shallow acceptor level assisted Auger recombination rates for n-on-p photodiodes. The suppression of band-to-band Auger by "band gap engineering" is predicted to lead to improved background-limited operating temperatures just as it does in long-wave InAs/InGaSb infrared detectors. © 1994 American Institute of Physics.
Details
- Title: Subtitle
- Theoretical performance of very long wavelength InAs/In x Ga 1− x Sb superlattice based infrared detectors
- Creators
- C. H. Grein - University of Illinois at ChicagoH. Cruz - Harvard UniversityM. E. Flatté - Harvard UniversityH. Ehrenreich - Harvard University
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.65(20), pp.2530-2532
- DOI
- 10.1063/1.112626
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 11/14/1994
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984429033702771
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