Journal article
Theory for Spin Diffusion in Disordered Organic Semiconductors
Physical review letters, Vol.102(15), pp.156604-1/4
04/17/2009
DOI: 10.1103/PhysRevLett.102.156604
PMID: 19518664
Abstract
We present a theory for spin diffusion in disordered organic semiconductors, based on incoherent hopping of a charge carrier and coherent precession of its spin in an effective magnetic field, composed of the random hyperfine field of hydrogen nuclei and an applied magnetic field. From Monte Carlo simulations and an analysis of the waiting-time distribution of the carrier we predict a surprisingly weak temperature dependence, but a considerable magnetic-field dependence of the spin-diffusion length. We show that both predictions are in agreement with experiments on organic spin valves.
Details
- Title: Subtitle
- Theory for Spin Diffusion in Disordered Organic Semiconductors
- Creators
- P. A. Bobbert - Eindhoven University of TechnologyW. Wagemans - Tech Univ Eindhoven, Dept Appl Phys, NL-5600 MB Eindhoven, NetherlandsF. W. A. van Oost - Tech Univ Eindhoven, Dept Appl Phys, NL-5600 MB Eindhoven, NetherlandsB. Koopmans - Tech Univ Eindhoven, Dept Appl Phys, NL-5600 MB Eindhoven, NetherlandsM. Wohlgenannt - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.102(15), pp.156604-1/4
- DOI
- 10.1103/PhysRevLett.102.156604
- PMID
- 19518664
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Publisher
- Amer Physical Soc
- Number of pages
- 4
- Grant note
- ECS 07-25280 / NSF; National Science Foundation (NSF) Dutch Technology Foundation (STW); Technologiestichting STW W911NF-08-1-0317 / Army MURI; MURI
- Language
- English
- Date published
- 04/17/2009
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428803202771
Metrics
6 Record Views