Journal article
Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices
Physical review. B, Condensed matter, Vol.103(3), 035310
01/26/2021
DOI: 10.1103/PhysRevB.103.035310
Abstract
We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetoconductance results from spin-center assisted transport.
Details
- Title: Subtitle
- Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices
- Creators
- Nicholas Harmon - University of IowaMichael Flatté - Eindhoven University of Technology
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.103(3), 035310
- DOI
- 10.1103/PhysRevB.103.035310
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- Ithaca
- Grant note
- DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-SC0016379; DOI: 10.13039/100007245, name: Microelectronics Advanced Research Corporation; DOI: 10.13039/100000185, name: Defense Advanced Research Projects Agency
- Language
- English
- Date published
- 01/26/2021
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428772902771
Metrics
3 Record Views