Journal article
Theory of semiconductor magnetic bipolar transistors
Applied physics letters, Vol.82(26), pp.4740-4742
06/30/2003
DOI: 10.1063/1.1586996
Abstract
Bipolar transistors with a ferromagnetic base are shown theoretically to have the potential to generate almost 100% spin-polarized current injection into nonmagnetic semiconductors. Optical control of ferromagnetism and spin splitting in the base can lead to either long-lived or ultrafast switching behavior. Fringe field control of the base magnetization could be used for information transfer between metallic magnetoelectronics and conventional semiconducting electronics. (C) 2003 American Institute of Physics.
Details
- Title: Subtitle
- Theory of semiconductor magnetic bipolar transistors
- Creators
- M E FlatteZ G YuE Johnston-HalperinD D Awschalom
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.82(26), pp.4740-4742
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.1586996
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Number of pages
- 3
- Language
- English
- Date published
- 06/30/2003
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428783002771
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