Journal article
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
Applied physics letters, Vol.101(9), 092109
08/27/2012
DOI: 10.1063/1.4749842
Abstract
Measurements of carrier recombination rates using time-resolved differential transmission are reported for an unintentionally doped mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice. Measurements at 77 K yield minority carrier lifetimes of 3 μs and 9 μs for the InAsSb alloy and InAs/InAsSb superlattice, respectively. The un-optimized InAsSb-based materials also exhibit long lifetimes (>850 ns) at temperatures up to 250 K, indicating the potential use for these materials as mid-wave infrared photodetectors with improved performance over current type-II superlattice photodetectors at both cryogenic and near-ambient operating temperatures.
Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. Research at the University of Iowa was sponsored by the U.S. Government. The authors would like to thank Mike Gehlsen for his assistance in the collection of time-resolved data.
Details
- Title: Subtitle
- Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
- Creators
- B. V OlsonE. A ShanerJ. K KimJ. F KlemS. D HawkinsL. M MurrayJ. P PrineasM. E FlattéT. F Boggess
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.101(9), 092109
- DOI
- 10.1063/1.4749842
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 08/27/2012
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984199752802771
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