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Triple V-shaped type-II quantum wells for long wavelength interband cascade lasers
Journal article   Peer reviewed

Triple V-shaped type-II quantum wells for long wavelength interband cascade lasers

B Petrović, T Sato, S Birner, J Zanon, M.E. Flatté, R Weih, F Hartmann and S Höfling
Physics letters. A, Vol.561, 130971
11/2025
DOI: 10.1016/j.physleta.2025.130971

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Abstract

We investigate triple V-shaped type-II quantum wells designed to emit at 6–9 μm wavelength range, consisting of three InAs(Sb) electron quantum wells and two Ga0.6 In0.4 Sb hole quantum wells. The wells’ composition and thicknesses are optimized in terms of wavefunction overlap and valence intersubband absorption (VISA) by using k⋅p calculation. The triple V-shaped type-II quantum well designed for emission at 6.2 μm, 7.5 μm, and 9.0 μm, shows 18.8 %, 18.9 % and 19.2 % higher wavefunction overlap, respectively, compared to the corresponding W-shaped designs of InAs/Ga0.6 In0.4 Sb/InAs wells commonly employed in active regions of interband cascade lasers. In addition, the calculated VISA in V-shaped quantum wells for the designed wavelength is significantly smaller than in W-shaped wells. These enhancements might extend the wavelength limit of room temperature emission of GaSb-based interband cascade lasers.
Interband cascade laser Wavefunction overlap Valence intersubband absorption Recombination region

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