Journal article
Tunability of electron spin coherence in III–V quantum wells
Journal of applied physics, Vol.91(10), pp.8682-8684
05/15/2002
DOI: 10.1063/1.1456385
Abstract
We have calculated both T 1 and T 2 for (110)-oriented GaAs/AlGaAs quantum wells near room temperature. The altered symmetry of (110)-oriented quantum wells leads to an increase in calculated spin coherence times (T 1) compared to those of similar (100)-oriented quantum wells, exceeding 1 ns at room temperature. We have also studied the electron spin coherence times as a function of applied electric field in (100)- and (110)-oriented GaAs/AlGaAs quantum wells. T 1 is considerably more responsive to the growth-direction electric field in (110)-oriented quantum wells than in (100)-oriented quantum wells, whereas the response of T 2 is similar for both growth directions. © 2002 American Institute of Physics.
Details
- Title: Subtitle
- Tunability of electron spin coherence in III–V quantum wells
- Creators
- Wayne H. LauMichael E. Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.91(10), pp.8682-8684
- DOI
- 10.1063/1.1456385
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Language
- English
- Date published
- 05/15/2002
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984428800802771
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