Journal article
Tunable Giant Spin Hall Conductivities in a Strong Spin-Orbit Semimetal:Bi1−xSbx
Physical review letters, Vol.114(10), 107201
03/2015
DOI: 10.1103/PhysRevLett.114.107201
PMID: 25815962
Abstract
Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi1−xSbx semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 (ℏ/e)(Ω cm)−1 for bismuth to 96 (ℏ/e)(Ω cm)−1 for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi0.83Sb0.17. The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi0.83Sb0.17, by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current.
Details
- Title: Subtitle
- Tunable Giant Spin Hall Conductivities in a Strong Spin-Orbit Semimetal:Bi1−xSbx
- Creators
- Cüneyt Şahin - University of IowaMichael E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.114(10), 107201
- DOI
- 10.1103/PhysRevLett.114.107201
- PMID
- 25815962
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Grant note
- DOI: 10.13039/100000028, name: Semiconductor Research Corporation; DOI: 10.13039/100007245, name: Microelectronics Advanced Research Corporation; DOI: 10.13039/100000185, name: Defense Advanced Research Projects Agency
- Language
- English
- Date published
- 03/2015
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199792402771
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