Journal article
Tuning the performance of organic spintronic devices using x-ray generated traps
Physical review letters, Vol.109(7), pp.076603-076603
08/17/2012
DOI: 10.1103/PhysRevLett.109.076603
PMID: 23006391
Abstract
X rays produced during electron-beam deposition of metallic electrodes drastically change the performance of organic spintronic devices. The x rays generate traps with an activation energy of ≈0.5 eV in a commonly used organic. These traps lead to a dramatic decrease in spin-diffusion length in organic spin valves. In organic magnetoresistive (OMAR) devices, however, the traps strongly enhance magnetoresistance. OMAR is an intrinsic magnetotransport phenomenon and does not rely on spin injection. We discuss our observations in the framework of currently existing theories.
Details
- Title: Subtitle
- Tuning the performance of organic spintronic devices using x-ray generated traps
- Creators
- J Rybicki - University of IowaR Lin - University of IowaF Wang - University of IowaM Wohlgenannt - University of IowaC He - University of California, BerkeleyT Sanders - University of California, BerkeleyY Suzuki - University of California, Berkeley
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.109(7), pp.076603-076603
- DOI
- 10.1103/PhysRevLett.109.076603
- PMID
- 23006391
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Language
- English
- Date published
- 08/17/2012
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199806402771
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