Journal article
Two Dimensional Materials Beyond MoS2 : Noble-Transition-Metal Dichalcogenides
Angewandte Chemie (International ed.), Vol.53(11), pp.3015-3018
03/10/2014
DOI: 10.1002/anie.201309280
PMID: 24554594
Abstract
The structure and electronic structure of layered noble-transition-metal dichalcogenides MX2 (M = Pt and Pd, and chalcogenides X = S, Se, and Te) have been investigated by periodic density functional theory (DFT) calculations. The MS2 monolayers are indirect band-gap semiconductors whereas the MSe2 and MTe2 analogues show significantly smaller band gap and can even become semimetallic or metallic materials. Under mechanical strain these MX2 materials become quasi-direct band-gap semiconductors. The mechanical-deformation and electron-transport properties of these materials indicate their potential application in flexible nanoelectronics.
Details
- Title: Subtitle
- Two Dimensional Materials Beyond MoS2 : Noble-Transition-Metal Dichalcogenides
- Creators
- Pere Miro - Constructor UniversityMahdi Ghorbani-Asl - Constructor UniversityThomas Heine - Constructor University
- Resource Type
- Journal article
- Publication Details
- Angewandte Chemie (International ed.), Vol.53(11), pp.3015-3018
- Publisher
- Wiley
- DOI
- 10.1002/anie.201309280
- PMID
- 24554594
- ISSN
- 1433-7851
- eISSN
- 1521-3773
- Number of pages
- 4
- Grant note
- FP7-PEOPLE-2009-IAPP QUASINANO; GA 251149; FP7-PEOPLE-2012-ITN MoWSeS; GA 317451 / European Commission; European Union (EU); European Commission Joint Research Centre HE 3543/18-1 / German Research Council (Deutsche Forschungsgemeinschaft); German Research Foundation (DFG) N62909-13-1-N222 ONR / ONRG (UK)
- Language
- English
- Date published
- 03/10/2014
- Academic Unit
- Chemistry
- Record Identifier
- 9984618519302771
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