Journal article
Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses
Solid-state electronics, Vol.54(10), pp.1125-1129
2010
DOI: 10.1016/j.sse.2010.05.020
Abstract
Intraexciton transitions in semiconductor quantum wells are modulated by strong and tunable few-cycle terahertz pulses. Time-resolved terahertz-pump and optical-probe measurements demonstrate that the 1
s heavy-hole and light-hole exciton resonances undergo large-amplitude spectral modulations when the terahertz radiation is tuned near the 1
s–2
p intraexciton transition. The strong nonlinear optical transients exhibit the characteristics of Rabi sidebands. The spectral features also reveal the dephasing properties of the optically dark 2
p states. A microscopic theory shows that the 2
p-dephasing rate is three times that of the 1
s-state. The ultrafast nonlinear optical effects and their quantum nature suggest promising applications to ultrahigh-speed optical signal processing and quantum information processing in the THz region.
Details
- Title: Subtitle
- Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses
- Creators
- J.L Tomaino - Oregon State UniversityA.D Jameson - Oregon State UniversityYun-Shik Lee - Oregon State UniversityJ.P Prineas - University of IowaJ.T Steiner - Philipps University of MarburgM Kira - Philipps University of MarburgS.W Koch - Philipps University of Marburg
- Resource Type
- Journal article
- Publication Details
- Solid-state electronics, Vol.54(10), pp.1125-1129
- DOI
- 10.1016/j.sse.2010.05.020
- ISSN
- 0038-1101
- eISSN
- 1879-2405
- Publisher
- Elsevier Ltd
- Language
- English
- Date published
- 2010
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199723902771
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