Unipolar spin diodes and transistors

M E Flatte; G Vignale

doi:10.1063/1.1348317

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Journal article

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Peer reviewed

Unipolar spin diodes and transistors

M E Flatte and G Vignale

Applied physics letters, Vol.78(9), pp.1273-1275

02/26/2001

DOI: 10.1063/1.1348317

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Abstract

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. (C) 2001 American Institute of Physics.

Physical Sciences

Physics

Physics, Applied

Science & Technology

Details

Title: Subtitle: Unipolar spin diodes and transistors
Creators: M E Flatte - University of Iowa
G Vignale - University of Missouri
Resource Type: Journal article
Publication Details: Applied physics letters, Vol.78(9), pp.1273-1275
Publisher: Amer Inst Physics
DOI: 10.1063/1.1348317
ISSN: 0003-6951
eISSN: 1077-3118
Number of pages: 3
Language: English
Date published: 02/26/2001
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984428677202771

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