Journal article
Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors
Physical review applied, Vol.7(2), 024016
02/2017
DOI: 10.1103/PhysRevApplied.7.024016
Abstract
Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs/InAs1−xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm2/V s at 120 K to approximately 2 cm2/V s at 30 K, providing evidence that holes are confined to localized states near the T2SL valence-miniband edge at low temperatures. Four distinct transport regimes are identified: (1) pure miniband transport, (2) miniband transport degraded by temporary capture of holes in localized states, (3) hopping transport between localized states in a mobility edge, and (4) hopping transport through defect states near the T2SL valence-miniband edge. Region (2) is found to have a thermal activation energy of ϵ2=36 meV corresponding to the energy range of a mobility edge. Region (3) is found to have a thermal activation energy of ϵ3=16 meV corresponding to the hopping transport activation energy. This description of vertical hole transport is analogous to electronic transport observed in disordered amorphous semiconductors displaying Anderson localization. For the T2SL, we postulate that localized states are created by disorder in the group-V alloy of the InAs1−xSbx hole well causing fluctuations in the T2SL valence-band energy.
Details
- Title: Subtitle
- Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors
- Creators
- B. V Olson - Sandia National LaboratoriesJ. F Klem - Sandia National LaboratoriesE. A Kadlec - Sandia National LaboratoriesJ. K Kim - Sandia National LaboratoriesM. D Goldflam - Sandia National LaboratoriesS. D Hawkins - Sandia National LaboratoriesA Tauke-PedrettiW. T Coon - Sandia National LaboratoriesT. R Fortune - Sandia National LaboratoriesE. A Shaner - Sandia National LaboratoriesM. E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review applied, Vol.7(2), 024016
- DOI
- 10.1103/PhysRevApplied.7.024016
- ISSN
- 2331-7019
- eISSN
- 2331-7019
- Grant note
- DOI: 10.13039/100000015, name: U.S. Department of Energy; DOI: 10.13039/100006168, name: National Nuclear Security Administration, award: DE-AC04-94AL85000; DOI: 10.13039/100006132, name: Office of Science; DOI: 10.13039/100006151, name: Basic Energy Sciences; name: Materials Sciences and Engineering Division
- Language
- English
- Date published
- 02/2017
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199818102771
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