Journal article
Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
Physical review letters, Vol.91(21), pp.216602/4-216602
11/21/2003
DOI: 10.1103/PhysRevLett.91.216602
PMID: 14683324
Abstract
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples, we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000%.
Details
- Title: Subtitle
- Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
- Creators
- C Ruster - University of WürzburgT Borzenko - University of WürzburgC Gould - University of WürzburgG Schmidt - University of WürzburgL W Molenkamp - University of WürzburgX LiuT J Wojtowicz - University of Notre DameJ K Furdyna - University of Notre DameZ G Yu - University of IowaM E Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.91(21), pp.216602/4-216602
- DOI
- 10.1103/PhysRevLett.91.216602
- PMID
- 14683324
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Publisher
- Amer Physical Soc
- Number of pages
- 4
- Language
- English
- Date published
- 11/21/2003
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428826202771
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