Journal article
Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures
AIP advances, Vol.7(5), pp.55923-055923-7
05/2017
DOI: 10.1063/1.4975692
Abstract
A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.
Details
- Title: Subtitle
- Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures
- Creators
- Michael E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- AIP advances, Vol.7(5), pp.55923-055923-7
- DOI
- 10.1063/1.4975692
- ISSN
- 2158-3226
- eISSN
- 2158-3226
- Number of pages
- 7
- Grant note
- C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation Program, Sponsored by MARCO and DARPA
- Language
- English
- Date published
- 05/2017
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199687602771
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