Wafer-Scale Epitaxial Modulation of Quantum Dot Density

N. Bart; C. Dangel; P. Zajac; N. Spitzer; J. Ritzmann; M. Schmidt; H. G. Babin; R. Schott; S. R. Valentin; S. Scholz; Y. Wang; R. Uppu; D. Najer; M. C. Löbl; N. Tomm; A. Javadi; N. O. Antoniadis; L. Midolo; K. Müller; R. J. Warburton; P. Lodahl; A. D. Wieck; J. J. Finley; A. Ludwig

doi:10.1038/s41467-022-29116-8

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Wafer-Scale Epitaxial Modulation of Quantum Dot Density

Journal article

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Peer reviewed

Wafer-Scale Epitaxial Modulation of Quantum Dot Density

N. Bart, C. Dangel, P. Zajac, N. Spitzer, J. Ritzmann, M. Schmidt, H. G. Babin, R. Schott, S. R. Valentin, S. Scholz, …

Nature communications, Vol.13(1), 1633

03/28/2022

DOI: 10.1038/s41467-022-29116-8

PMCID: PMC8960873

PMID: 35347120

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Abstract

Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/mu m(2) and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.

Condensed Matter - Materials Science

General Biochemistry, Genetics and Molecular Biology

Applied Physics (physics.app-ph)

SELF-ORGANIZED GROWTH

UNIFORMITY

ISLANDS

FOS: Physical sciences

GAAS

General Physics and Astronomy

General Chemistry

Condensed Matter - Mesoscale and Nanoscale Physics

SURFACE

Materials Science (cond-mat.mtrl-sci)

Physics - Applied Physics

Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Multidisciplinary

CHARGE

Details

Title: Subtitle: Wafer-Scale Epitaxial Modulation of Quantum Dot Density
Creators: N. Bart
C. Dangel
P. Zajac
N. Spitzer
J. Ritzmann
M. Schmidt
H. G. Babin
R. Schott
S. R. Valentin
S. Scholz
Y. Wang
R. Uppu
D. Najer
M. C. Löbl
N. Tomm
A. Javadi
N. O. Antoniadis
L. Midolo
K. Müller
R. J. Warburton
P. Lodahl
A. D. Wieck
J. J. Finley
A. Ludwig
Resource Type: Journal article
Publication Details: Nature communications, Vol.13(1), 1633
DOI: 10.1038/s41467-022-29116-8
PMID: 35347120
PMCID: PMC8960873
NLM abbreviation: Nat Commun
ISSN: 2041-1723
Grant note: DOI: 10.13039/501100002347, name: Bundesministerium für Bildung und Forschung, award: 16KISQ009; DOI: 10.13039/501100001659, name: Deutsche Forschungsgemeinschaft, award: FI947-6, INST 95-164, TRR 160/2, 383065199; DOI: 10.13039/501100010579, name: Deutsch-Französische Hochschule, award: CDFA-05-06
Language: English
Date published: 03/28/2022
Academic Unit: Physics and Astronomy
Record Identifier: 9984530373502771

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