Journal article
Warping a single Mn acceptor wavefunction by straining the GaAs host
Nature materials, Vol.6(7), pp.512-515
07/01/2007
DOI: 10.1038/nmat1936
PMID: 17558428
Abstract
Transition-metal dopants such as Mn determine the ferromagnetism in dilute magnetic semiconductors such as Ga1-xMnxAs. Recently, the acceptor states of Mn dopants in GaAs were found to be highly anisotropic owing to the symmetry of the host crystal. Here, we show how the shape of such a state can be modified by local strain. The Mn acceptors near InAs quantum dots are mapped at room temperature by scanning tunnelling microscopy. Dramatic distortions and a reduction in the symmetry of the wavefunction of the hole bound to the Mn acceptor are observed originating from strain induced by quantum dots. Calculations of the acceptor-state wavefunction in the presence of strain, within a tight-binding model and within an effective-mass model, agree with the experimentally observed shape. The magnetic easy axes of strained lightly doped Ga1-xMnxAs can be explained on the basis of the observed local density of states for the single Mn spin.
Details
- Title: Subtitle
- Warping a single Mn acceptor wavefunction by straining the GaAs host
- Creators
- A. M Yakunin - Eindhoven University of TechnologyA. Yu Silov - Eindhoven University of TechnologyP. M Koenraad - Eindhoven University of TechnologyJ.-M Tang - University of IowaM. E Flatté - University of IowaJ.-L Primus - IMECW Van Roy - IMECJ De Boeck - IMECA. M Monakhov - Physico-Technical InstituteK. S Romanov - Physico-Technical InstituteI. E Panaiotti - Physico-Technical InstituteN. S Averkiev - Physico-Technical Institute
- Resource Type
- Journal article
- Publication Details
- Nature materials, Vol.6(7), pp.512-515
- DOI
- 10.1038/nmat1936
- PMID
- 17558428
- ISSN
- 1476-1122
- eISSN
- 1476-4660
- Language
- English
- Date published
- 07/01/2007
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429057702771
Metrics
2 Record Views